A study of CMOS radiation tolerant transistors using green functions

Deep submicron CMOS processes have been long known to show radiation hardness properties, which make them an ideal choice for the development of integrated circuits for radiation and high-energy physics experiments. This property can be further exploited by means of the use of special layout styles such as the gate enclosed transistors. In this work Green functions have been used to solve the Poisson equation on the channel for this kind of transistors, obtaining an analytical expression that has been validated with experimental data in a standard CMOS 0.18 mum process.