DocumentCode :
1572865
Title :
GaAs-based bipolar cascade light-emitting-diodes and superluminescent-diodes at the 1.04-μm wavelength regime
Author :
Guol, Shi-Hao ; Wang, Jr-Hung ; Wu, Yu-Huei ; Lin, Wei ; Yang, Ying-Jay ; Sun, Chi-Kuang ; Pan, Ci-Ling ; Shi, Jin-Wei
Author_Institution :
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei
fYear :
2008
Firstpage :
589
Lastpage :
590
Abstract :
We first demonstrate GaAs-based bipolar cascade superluminescent-diodes by use of chirped multiple-quantum-wells in series by a tunnel junction, effectively minimizing the problem of non-uniform carrier-distribution among MQWs and operating around important bio-optical window of 1.04-mum wavelength.
Keywords :
III-V semiconductors; gallium arsenide; quantum well devices; superluminescent diodes; GaAs; bipolar cascade light emitting diodes; chirped multiple quantum wells; nonuniform carrier distribution; superluminescent diodes; tunnel junction; Light emitting diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
Type :
conf
DOI :
10.1109/LEOS.2008.4688755
Filename :
4688755
Link To Document :
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