Title :
Saturation of intersubband absorption in GaN/AlN-based waveguide integrated with spot-size converter
Author :
Iizuka, Norio ; Yoshida, Haruhiko ; Managaki, Nobuto ; Shimizu, Toshimasa ; Hassanet, Sodabanlu ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution :
Corp. R&D Center, Toshiba Corp., Kawasaki
Abstract :
An AlN-based intersubband optical switch was fabricated with spot-size converter utilizing Si3N4 as a cladding layer. Intersubband absorption was observed at 1.48 mum. Absorption saturation by 5 dB was achieved with energy of 25 pJ.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; integrated optics; optical saturable absorption; optical switches; optical waveguides; wide band gap semiconductors; GaN-AlN; Si3N4; cladding layer; energy 25 pJ; integrated waveguide; intersubband absorption saturation; intersubband optical switch; spot-size converter; wavelength 1.48 mum; Absorption; Etching; Gallium nitride; Optical saturation; Optical switches; Optical waveguides; Propagation losses; Pulse modulation; Quantum well devices; Switching converters;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688759
