Title :
Integrated Anti-Short-Circuit Safety Circuit in CMOS SOI for Normally-On JFET
Author :
Falahi, K.E. ; Dubois, Fabien ; Bergogne, Dominique ; Risaletto, Damien ; Allard, Bruno
Author_Institution :
Univ. de Lyon, Lyon, France
Abstract :
The SiC JFET is a commercially available device either as a normally-on or a normally-off configuration. The latter cascode configuration incorporates a Si MOSFET that prevents the usage of the device in harsh environment, i.e. ambient temperature greater than 200deg C. Besides the acceptance of the normally-on native device is linked to an industrial and validated solution to avoid the inherent short-circuit when operated in an inverter leg. The short-circuit appears when the inverter is powered-on and the SiC JFET drivers are not in a position to apply an off-state condition to the power switches. There is then a need for a safety circuit that provides the off-state condition to the power switches in the shortest period of time. Such a safety circuit is detailed and fabricated as an integrated circuit in SOI CMOS technology.
Keywords :
CMOS integrated circuits; MOSFET; junction gate field effect transistors; short-circuit currents; silicon-on-insulator; switches; CMOS SOI; SOI CMOS technology; Si MOSFET; SiC; SiC JFET; integrated antishort-circuit safety circuit; integrated circuit; normally-on JFET; power switches; CMOS integrated circuits; Inverters; JFETs; Logic gates; Safety; Silicon carbide;
Conference_Titel :
Integrated Power Electronics Systems (CIPS), 2012 7th International Conference on
Conference_Location :
Nuremberg
Print_ISBN :
978-3-8007-3414-6