• DocumentCode
    1573323
  • Title

    Selective lateral anodic etching of n-doped GaN without photo-assistance for lift-off application

  • Author

    Song, Kwangmin ; Park, Joonmo ; Do, Hyung-A ; Ryu, Sang-Wan

  • Author_Institution
    Dept. of Phys., Chonnam Nat. Univ., Gwangju
  • fYear
    2008
  • Firstpage
    636
  • Lastpage
    637
  • Abstract
    An anodic etching technique for selective lateral wet etching of n-doped GaN without the photo-assistance was described. N-doped GaN was successfully etched with 0.3 M oxalic acid at 40 V.
  • Keywords
    III-V semiconductors; anodisation; etching; gallium compounds; GaN; lift-off application; photoassistance; selective lateral anodic etching; selective lateral wet etching; Electrochemical processes; Gallium nitride; Light emitting diodes; Optical microscopy; Physics; Scanning electron microscopy; Substrates; Thermal conductivity; Voltage; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
  • Conference_Location
    Acapulco
  • Print_ISBN
    978-1-4244-1931-9
  • Electronic_ISBN
    978-1-4244-1932-6
  • Type

    conf

  • DOI
    10.1109/LEOS.2008.4688779
  • Filename
    4688779
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1573323