Title :
Design of an integrated power converter in Wide Band Gap for harsh environments
Author :
Mogniotte, Jean-François ; Tournier, Dominique ; Bevilacqua, Pascal ; Godignon, Philippe ; Planson, Dominique
Author_Institution :
Lab. Ampere, Univ. de Lyon, Ampere, France
Abstract :
AMPERE laboratory (Lyon, France) and Center National Microelectronics of Barcelona (SPAIN) have recently developed lateral MESFETs in SiC. The current purpose is to develop electronic systems based on these MESFETs for applications operating in harsh environments (e.g. High Temperature >; 300°C). This paper presents the design of an integrated power converter with its driver in SiC and the characterisation of elementary functions.
Keywords :
Schottky gate field effect transistors; integrated circuit design; power convertors; silicon compounds; wide band gap semiconductors; SiC; electronic system; elementary function; integrated power converter design; lateral MESFET; wide band gap; Mercury (metals);
Conference_Titel :
Integrated Power Electronics Systems (CIPS), 2012 7th International Conference on
Conference_Location :
Nuremberg
Print_ISBN :
978-3-8007-3414-6
