Title :
The design of high linearity pHEMT switches
Author :
Lu, Ning ; Weber, Robert J.
Author_Institution :
Dept of Electr. & Comput. Eng., Iowa State Univ., Ames, IA, USA
Abstract :
In this paper we present the effect of gate capacitors on 5 types of single pole single throw (SPST) switches. The designs were undertaken using the 0.8 um gate length GaAs pHEMT process from Skyworks and the analysis was done at 1GHz. We found that the gate capacitors could improve the linearity of 3 types of switches dramatically in the off state, with the design trade-offs of isolation and insertion loss.
Keywords :
gallium arsenide; high electron mobility transistors; semiconductor switches; GaAs; GaAs pHEMT process; Skyworks; gate capacitors; high linearity pHEMT switches; single pole single throw switches; size 0.8 mum; Capacitors; FETs; Insertion loss; Linearity; PHEMTs; Radio frequency; Resistors; Switches; Switching circuits; Voltage;
Conference_Titel :
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-7771-5
DOI :
10.1109/MWSCAS.2010.5548786
