III-V-Semiconductor nanowires for the fabrication of optoelectronic and electronic devices

Standard Semiconductor technology uses active and function defining layer structures which are at least nearly lattice matched to the substrate, to ensure the required device performance. The nanowire approach allows very large differences in crystal structure between carrier substrate and active device regions with nearly no loss in material quality. This way the available material and related functional diversity is enhanced significantly. So, for example, the fabrication of high quality III-V-semiconductor lasers on silicon substrates should be possible.