• DocumentCode
    1573745
  • Title

    Comparison between electromagnetic and thermal stress induced by Direct Current flow in IGBT bond wires

  • Author

    Medjahed, H. ; Vidal, P.-E. ; Nogarede, B.

  • Author_Institution
    LGP, Univ. de Toulouse, Tarbes, France
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    This study is focused on the IGBT wire bond behaviour. We apply a direct current flow within the wire to reproduce the thermal cycling test used in reliability studies. On one hand we compare the temperature distribution between 3D FEM simulation and the experimental temperature measurement. We also point out the Von-Mises stress obtained. On the other hand we compare the thermo-mechanical results to those obtained with a 1D simplified thermal model. We also take into account the electromagnetic force and the mechanical stress that could be induced on the bond wire. Some experimental and simulation results are given.
  • Keywords
    finite element analysis; insulated gate bipolar transistors; semiconductor device reliability; temperature distribution; thermal stresses; 1D simplified thermal model; 3D FEM simulation; IGBT bond wires; Von-Mises stress; direct current flow; electromagnetic force; experimental temperature measurement; reliability studies; temperature distribution; thermal cycling test; thermal stress; Force; Insulated gate bipolar transistors; Numerical models; Stress; Temperature measurement; Three dimensional displays; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Power Electronics Systems (CIPS), 2012 7th International Conference on
  • Conference_Location
    Nuremberg
  • Print_ISBN
    978-3-8007-3414-6
  • Type

    conf

  • Filename
    6170675