Title :
Comparison between electromagnetic and thermal stress induced by Direct Current flow in IGBT bond wires
Author :
Medjahed, H. ; Vidal, P.-E. ; Nogarede, B.
Author_Institution :
LGP, Univ. de Toulouse, Tarbes, France
Abstract :
This study is focused on the IGBT wire bond behaviour. We apply a direct current flow within the wire to reproduce the thermal cycling test used in reliability studies. On one hand we compare the temperature distribution between 3D FEM simulation and the experimental temperature measurement. We also point out the Von-Mises stress obtained. On the other hand we compare the thermo-mechanical results to those obtained with a 1D simplified thermal model. We also take into account the electromagnetic force and the mechanical stress that could be induced on the bond wire. Some experimental and simulation results are given.
Keywords :
finite element analysis; insulated gate bipolar transistors; semiconductor device reliability; temperature distribution; thermal stresses; 1D simplified thermal model; 3D FEM simulation; IGBT bond wires; Von-Mises stress; direct current flow; electromagnetic force; experimental temperature measurement; reliability studies; temperature distribution; thermal cycling test; thermal stress; Force; Insulated gate bipolar transistors; Numerical models; Stress; Temperature measurement; Three dimensional displays; Wires;
Conference_Titel :
Integrated Power Electronics Systems (CIPS), 2012 7th International Conference on
Conference_Location :
Nuremberg
Print_ISBN :
978-3-8007-3414-6
