Title :
Compressively strained InSb MOSFETs with high hole mobility for p-channel application
Author :
Barth, Matthew ; Agrawal, Ankit ; Ali, Ahmad ; Fastenau, J. ; Loubychev, Dmitri ; Liu, W.K. ; Datta, Soupayan
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
We demonstrate synthesis of p-channel InSb MOSFET with 1.9% compressive biaxial strain with outstanding room temperature and 150K Hall mobility of 680 cm2/Vs and 2,500 cm2/Vs at hole sheet density of 5x1012 /cm2 and 2.3x1012 /cm2, respectively. The incorporation of an InP layer on top of Al0.35In0.65Sb barrier allows for integration of a high-k dielectric and demonstration of InSb pMOSFET with significantly reduced gate leakage. Parallel conduction limits the on-off ratio of the InSb MOSFET above 150K. Refinement of the InP barrier to reduce interface states and buffer layer to reduce parallel conduction is expected to improve InSb pMOSFET characteristics at 300K.
Keywords :
III-V semiconductors; MOSFET; high-k dielectric thin films; hole mobility; indium compounds; InSb; compressive biaxial strain; compressively strained MOSFET; gate leakage; high hole mobility; high-k dielectric; hole sheet density; on-off ratio; p-channel application; parallel conduction limits; temperature 293 K to 298 K; temperature 300 K; Aluminum oxide; Indium phosphide; Logic gates; MOSFET; Plasma temperature; Temperature; Temperature measurement;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633775
