Effects of oxidant dosing on GaSb (100) prior to atomic layer deposition and high-performance antimonide-based P-channel MOSFETs with Ni-alloy S/D

Antimonide-based compound semiconductors have recently emerged as potential candidates for replacement of silicon in future high-performance, low-power CMOS technologies, as both n- and p-channel MOSFETs with high electron and hole mobilities have been demonstrated. The high trap density at the interface of GaSb and high-k dielectric is a challenge in fabricating antimonide-based MOSFETs. Recently, wet-clean and in-situ hydrogen plasma exposure prior to atomic layer deposition (ALD) of gate dielectrics have been used to reduce interface trap density. In this paper, we study the effects of in-situ oxidant dosing on the Al₂O₃/GaSb (100) interface. This surface passivation scheme is integrated with a self-aligned Ni-alloy S/D MOSFET process.