DocumentCode
1573825
Title
A fast settling Slew Rate Enhancement technique for operational amplifiers
Author
Gopalkrishna, Siddhartha ; Krishna, Gopal ; Jalali-Farahani, Bahar
Author_Institution
Electr. Eng., Arizona State Univ. Tempe, Tempe, AZ, USA
fYear
2010
Firstpage
965
Lastpage
968
Abstract
This paper presents a fast settling SRE (Slew Rate Enhancement) technique for operational amplifiers. An opamp using a constant-gm biasing together with the proposed SRE circuit is designed and it is shown that stable large and small signal characteristics can be achieved across the wide range of temperature. The opamp was designed and laid out in Jazz 0.18μm process using 1.8V supply voltage. The core circuit consumes 3mA while the SRE circuit has a static power consumption of only 200uA (%6.67 of the power of the core circuitry). The slew rate of the opamp has increased from 25 V/us to 150 V/us at room temperature. The low variation of both small signal as well as large signal characteristics of the opamp across the temperature has been verified by Spectre simulation using PSP models.
Keywords
amplifiers; PSP models; SRE circuit; Spectre simulation; fast settling slew rate enhancement technique; opamp; operational amplifiers; size 0.18 mum; voltage 1.8 V; Circuit simulation; Electronic circuits; Operational amplifiers; Robustness; Semiconductor device modeling; Signal resolution; Temperature dependence; Temperature distribution; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location
Seattle, WA
ISSN
1548-3746
Print_ISBN
978-1-4244-7771-5
Type
conf
DOI
10.1109/MWSCAS.2010.5548794
Filename
5548794
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