DocumentCode :
1574097
Title :
Forming-free resistive switching with low current operation in graphene-insulator-graphene structures
Author :
Chakrabarti, B. ; Roy, Tonmoy ; Joiner, Corey A. ; Hesabi, Zohreh R. ; Vogel, Eric M.
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Texas at Dallas, Richardson, TX, USA
fYear :
2013
Firstpage :
55
Lastpage :
56
Abstract :
Graphene as a conducting electrode has attracted significant attention due to its low sheet resistance, high flexibility and high transparency [1]. Recently, high out-of-plane resistance of graphene has been utilized to reduce the operating current in metal oxide based resistive memories (RRAMs) [2]. However, this report also indicates that the high out-of-plane resistance of graphene contributes to the requirement of high-voltage forming (6 V) [2]. Since the forming step requires significantly higher voltage compared to regular set/reset operations, elimination of the forming step while maintaining the low-current operability is important for graphene RRAMs.In this work we demonstrate forming-free resistive switching in graphene-insulator-graphene (G-I-G) structures with graphene used as both top and bottom electrodes.
Keywords :
CVD coatings; aluminium compounds; atomic layer deposition; electrodes; electron beam deposition; graphene; random-access storage; titanium compounds; vacuum deposition; C; CVD; RRAM; TiO2-Al2O3-TiOx; annealing process; atomic layer deposition; conducting electrode; electron beam deposition; forming free resistive switching; graphene-insulator-graphene structures; low current operation; low sheet resistance; metal oxide based resistive memory; Aluminum oxide; Electrodes; Graphene; Resistance; Switches; Tin; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4799-0811-0
Type :
conf
DOI :
10.1109/DRC.2013.6633790
Filename :
6633790
Link To Document :
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