Title :
Growth of GaNSb alloy on the N-rich side by metal-organic vapor phase epitaxy
Author :
Moon, Se-Hoon ; Do, Hyung-A ; Ryu, Sang-Wan
Author_Institution :
Dept. of Phys., Chonnam Nat. Univ., Gwangju
Abstract :
GaNSb films on the N-rich side have been grown on sapphire substrate at various growth temperatures by MOCVD. The optical properties of the grown films were characterized by absorption spectroscopy and increased absorption below band gap energy was observed for GaNSb grown at 770 degC.
Keywords :
III-V semiconductors; MOCVD; energy gap; gallium compounds; infrared spectra; semiconductor epitaxial layers; semiconductor growth; ultraviolet spectra; vapour phase epitaxial growth; visible spectra; wide band gap semiconductors; GaNSb; MOCVD; absorption spectroscopy; band gap energy; growth; metal-organic vapor phase epitaxy; sapphire substrate; temperature 770 degC; Electromagnetic wave absorption; Epitaxial growth; Gallium nitride; Lattices; MOCVD; Optical films; Optical microscopy; Photonic band gap; Substrates; Temperature;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688817
