Title :
Design of a CMOS transducer interface for an UV silicon sensor
Author :
Díaz-Méndez, A. ; Rocha-Pérez, M. ; Aceves, M. ; Pedraza, J. ; Gómez, E. ; Dominguez, C. ; Merlos, A. ; Formatje, X.
Author_Institution :
Electron. Dept., INAOE, Puebla, Mexico
Abstract :
This paper presents the cointegration of an UV silicon sensor with extended responsivity, and its conditioning circuit. The sensor´s output current is converted to a digital code for subsequent processing. Post-layout results shows a suitable response in order to obtain a digital code corresponding to sensor photocurrent in the range of 200 to 1100nm. The circuit has been designed in a CNM 2.5μm CMOS technology.
Keywords :
CMOS integrated circuits; integrated circuit design; photoconductivity; signal processing equipment; transducers; CMOS technology; CMOS transducer interface; UV silicon sensor; circuit design; digital code; sensor output current; sensor photocurrent; signal conditioning circuit; size 2.5 mum; CMOS technology; Capacitive sensors; Circuits; Optoelectronic and photonic sensors; Photoconductivity; Photonic band gap; Sensor systems; Signal processing; Silicon; Transducers;
Conference_Titel :
Circuits and Systems (MWSCAS), 2010 53rd IEEE International Midwest Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-7771-5
DOI :
10.1109/MWSCAS.2010.5548811
