Mobility strain response and low temperature characterization of Ge p-MOSFETs

Author

I-Hsieh Wong ; Yen-Ting Chen ; Huang-Jhih Ciou ; Yu-Sheng Chen ; Jhih-Yang Yan ; Chee Wee Liu

Author_Institution

Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2013

Firstpage

73

Lastpage

74

Abstract

Ge is one of the most promising candidate for p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) because its highest hole mobility than Si and III-V materials. Since the carrier mobility depends on both the substrate orientation and channel direction. The calculation shows that (110) Ge p-MOSFET has the highest unstrained hole mobility with the <;110> channel direction. To further improve the performance, the compressive stress is applied mechanically to enhance the hole mobility. The source/drain (S/D) resistance is also reduced using the NiGe contact electrodes.

Keywords

MOSFET; electrical contacts; electrochemical electrodes; elemental semiconductors; germanium; hole mobility; Ge; III-V materials; S-D resistance; Si material; carrier mobility strain response; compressive stress; contact electrode; hole mobility enhancement; low temperature characterization; p-MOSFET; p-channel metal-oxide-semiconductor field-effect transistors; source-drain resistance; substrate orientation; Logic gates; MOSFET circuits; Rapid thermal annealing; Strain; Stress; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2013 71st Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4799-0811-0

Type

conf

DOI

10.1109/DRC.2013.6633799

Filename

6633799