Title :
Side-gate-controlled dual-mode power gating device by graphene nanoribbon transistor
Author :
Lieh-Ting Tung ; Kan, Edwin C.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Double side-gate graphene nanoribbon transistor demonstrates bandgap modulation properties and negative temperature coefficient on the on-state resistance which makes it promising as the power gating device. Side-gates can be used to switch between the inverting and non-inverting modes for the proposed device from electrostatic doping.
Keywords :
doping; electrostatics; energy gap; graphene; nanoribbons; power transistors; C; bandgap modulation properties; double side-gate transistor; dual-mode power gating device; electrostatic doping; graphene nanoribbon transistor; negative temperature coefficient; noninverting modes; on-state resistance; side-gate-controlled device; Doping; Electrostatics; Graphene; Logic gates; Modulation; Photonic band gap; Transistors;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633806
