• DocumentCode
    1574588
  • Title

    Impact ionization in InSb studied by THz-pump-THz probe spectroscopy

  • Author

    Hoffmann, Matthias C. ; Hebling, János ; Hwang, Harold Y. ; Yeh, Ka-Lo ; Nelson, Keith A.

  • Author_Institution
    Dept. of Chem., Massachusetts Inst. of Technol., Cambridge, MA
  • fYear
    2008
  • Firstpage
    737
  • Lastpage
    738
  • Abstract
    We observe impact ionization and saturation of free carrier absorption in indium antimonide at 200K and 80K. We employ a novel THz-pump-THz probe scheme with up to 100 kV/cm pump fields and 100 MW/cm2 intensity.
  • Keywords
    III-V semiconductors; impact ionisation; indium compounds; terahertz spectroscopy; InSb; free carrier absorption saturation; impact ionization; temperature 200 K; temperature 80 K; terahertz-pump-terahertz probe spectroscopy; Absorption; Delay; Impact ionization; Optical pulse generation; Optical pulses; Photonic band gap; Probes; Pulse amplifiers; Spectroscopy; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
  • Conference_Location
    Acapulco
  • Print_ISBN
    978-1-4244-1931-9
  • Electronic_ISBN
    978-1-4244-1932-6
  • Type

    conf

  • DOI
    10.1109/LEOS.2008.4688831
  • Filename
    4688831
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1574588