Title :
Impact ionization in InSb studied by THz-pump-THz probe spectroscopy
Author :
Hoffmann, Matthias C. ; Hebling, János ; Hwang, Harold Y. ; Yeh, Ka-Lo ; Nelson, Keith A.
Author_Institution :
Dept. of Chem., Massachusetts Inst. of Technol., Cambridge, MA
Abstract :
We observe impact ionization and saturation of free carrier absorption in indium antimonide at 200K and 80K. We employ a novel THz-pump-THz probe scheme with up to 100 kV/cm pump fields and 100 MW/cm2 intensity.
Keywords :
III-V semiconductors; impact ionisation; indium compounds; terahertz spectroscopy; InSb; free carrier absorption saturation; impact ionization; temperature 200 K; temperature 80 K; terahertz-pump-terahertz probe spectroscopy; Absorption; Delay; Impact ionization; Optical pulse generation; Optical pulses; Photonic band gap; Probes; Pulse amplifiers; Spectroscopy; Temperature;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688831
