• DocumentCode
    1574830
  • Title

    Dielectric charge screening of dislocations and associated electrical phenomena in semiconductors

  • Author

    Kaila, M.M.

  • Author_Institution
    Sch. of Phys., New South Wales Univ., Kensington, NSW, Australia
  • fYear
    1989
  • Firstpage
    223
  • Lastpage
    228
  • Abstract
    A dielectric formalism is used to calculate the electrical conductivity of disordered InSb as a representative case. The electrical conductivity of InSb containing dislocations is plotted as a function of temperature and compared with experimental results for pure crystalline InSb. It is shown that dislocations are a stronger source of electrons than impurities; a dislocation provides T2 exp (-0.6/kT) more electrons than the normal charge transport expected in a perfect material
  • Keywords
    III-V semiconductors; defect electron energy states; dislocation scattering; electrical conductivity of solids; indium antimonide; III-V semiconductor; dielectric charge screening; dielectric formalism; dislocations; disordered InSb; electrical conductivity; pure crystalline InSb; Conductivity; Crystallization; Degradation; Dielectric breakdown; Dielectric losses; Electric breakdown; Electrons; Lattices; Physics; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Conduction and Breakdown in Solid Dielectrics, 1989., Proceedings of the 3rd International Conference on
  • Conference_Location
    Trondheim
  • Type

    conf

  • DOI
    10.1109/ICSD.1989.69193
  • Filename
    69193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1574830