Quantum corrected drift-diffusion simulation for prediction of CMOS scaling

As the sizes of MOSFETs become smaller, the role of TCAD tools has increased significantly. Among TCAD tools, drift-diffusion (DD) simulators have been useful in providing insights into the operational principles of MOSFETs. DD simulators are fast due to a low computational burden compared to more sophisticated simulation methods such as full-band quantum transport simulators which cannot handle the volume of the bulk devices. However, as the device sizes become smaller, quantum mechanical (QM) effects render the DD results inaccurate. These QM phenomena are the ballistic resistance, the ballistic transport, the source-to-drain (SD) tunneling and the quantum confinement effects. In this work, these QM effects except the SD tunneling are dealt with such that DD tools can extend their use in modern nanoscale MOSFETs.