• DocumentCode
    1574953
  • Title

    Controlling electronic properties of wafer-bonded interfaces among dissimilar materials: A path to developing novel wafer-bonded devices

  • Author

    Lal, Shalini ; Lu, Jing ; Guidry, Matthew ; Thibeault, Brian ; DenBaars, Steven P. ; Mishra, Umesh K.

  • Author_Institution
    Department of Electrical and Computer Engineering, Materials Department, University of California, Santa Barbara, CA 93106
  • fYear
    2013
  • Firstpage
    121
  • Lastpage
    122
  • Abstract
    A breakthrough in understanding the nature of wafer-bonded interfaces is reported. The DC-behavior of a wafer-bonded heterojunction between In0.53Ga0.47As (InGaAs) and In0.1Ga0.9N (InGaN) is investigated by using a wafer-bonded vertical electron transistor (BAVET) structure with an In0.52Al0.48As (InAlAs) gate-barrier-layer. It is demonstrated that the Fermi-level of the InAlAs layer influences the wafer-bonded-interface properties (WBIP) during the wafer-bonding of InGaAs to InGaN. Specifically, by using a high p-doping in the InAlAs layer, a dramatic improvement in the WBIP and consequently, a high-breakdown for a BAVET is demonstrated.
  • Keywords
    Apertures; Capacitance-voltage characteristics; Gallium nitride; Indium gallium arsenide; Logic gates; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2013 71st Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4799-0811-0
  • Type

    conf

  • DOI
    10.1109/DRC.2013.6633823
  • Filename
    6633823
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1574953