Title :
Nonlinear power dependence for efficient THz generation from InGaN/GaN multiple quantum wells
Author :
Mu, Xiaodong ; Ding, Yujie J. ; Arif, Ronald A. ; Jamil, Muhammad ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA
Abstract :
In this work, we present our new findings following our studies of the THz generation from InGaN/GaN multiple quantum wells (MQW´s), pumped by a frequency-doubled sub-picosecond Ti:sapphire amplifier at the output wavelength of 395 nm. For the pump power of 320 mW, an average output power of 32 nW was measured in the frequency range of 300 GHz - 4.28 THz. Based on the photo luminescence (PL) spectra measured on these InGaN/GaN MQW´s, quantum dots (QD´s) were formed.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; optical pumping; photoluminescence; quantum well lasers; semiconductor optical amplifiers; semiconductor quantum wells; terahertz wave generation; wide band gap semiconductors; InGaN-GaN; Ti:sapphire amplifier; frequency 300 GHz to 4.28 THz; frequency doubled sub picosecond; multiple quantum wells; nonlinear power dependence; photoluminescence spectra; power 32 nW; power 320 mW; terahertz generation; wavelength 395 nm; Charge carrier processes; Frequency; Gallium nitride; Laser excitation; Piezoelectric polarization; Power generation; Power measurement; Quantum computing; Quantum well devices; Wavelength measurement;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688857
