On characteristic variability of 16-nm-gate bulk FinFET devices induced by intrinsic parameter fluctuation and process variation effect

The HKMG bulk FinFET has been one of major device technologies. However, the bulk FinFETs´ characteristics has been affected to different extents by various fluctuation sources, such as random dopants (RDs), interface traps (ITs), work functions (WKs), and the process variations (PVs) [1-5]. In this work, we for the first time study the 16-nm-gate HKMG bulk FinFET´s characteristic fluctuation resulting from the aforementioned random factors at the same time. By using an experimentally calibrated 3D quantum-corrected device simulation, the main findings of this study indicate the total Vth´s fluctuation (σV_th) of the tested device is 41.1 mV, where the RDs-induced σV_th is the most serious one (28.5 mV) among all fluctuation sources. The coupled surface potentials cannot be simply estimated by using their statistical sum of individual random source.