Title :
Atomistic simulation on gate-recessed InAs/GaSb TFETs and performance benchmark
Author :
Zhengping Jiang ; Yu He ; Guangle Zhou ; Kubis, Tillmann ; Xing, Huili Grace ; Klimeck, Gerhard
Author_Institution :
Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN, USA
Abstract :
Fully atomistic simulations for realistically extended complex devices show the best performing SSmin. The L-shaped TFETs show best performance; however, their scaling is limited by the undercut. The ON currents in UTB TFETs are limited by source-gate coupling, which can be improved by including a doping layer. NW TFETs suffer from strong confinement effects, which reduce the ON current densities significantly. Wire diameters of more than 10 nm are required to get the broken-gap band alignment.
Keywords :
III-V semiconductors; field effect transistors; gallium compounds; indium compounds; semiconductor device testing; InAs-GaSb; TFET; UTB; atomistic simulation; broken-gap band alignment; doping layer; source-gate coupling; Benchmark testing; Doping; Educational institutions; Electrostatics; Logic gates; Performance evaluation; Tunneling;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633835
