• DocumentCode
    1575371
  • Title

    Reduction of charge transfer region using graphene nano-ribbon geometry for improved complementary FET performance at sub-micron channel length

  • Author

    Hollander, Matthew J. ; Shukla, Nitin ; Agrawal, Nidhi ; Madan, Himanshu ; Robinson, Joshua A. ; Datta, Soupayan

  • Author_Institution
    Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2013
  • Firstpage
    151
  • Lastpage
    152
  • Abstract
    In this work, we investigate the effect of nano-ribbon geometries on graphene device performance and explain its effect on reducing the negative impact of Dirac point shift due to charge transfer into the graphene channel from the metal-graphene contact thereby leading to improved device performance and balanced n, p FET performance at submicron channel lengths.
  • Keywords
    charge exchange; field effect transistors; graphene; nanoribbons; Dirac point shift; charge transfer region; complementary FET performance; graphene channel; graphene device performance; graphene nanoribbon geometry; metal-graphene contact; submicron channel lengths; Charge transfer; Geometry; Graphene; Logic gates; Metals; Nanoscale devices; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference (DRC), 2013 71st Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4799-0811-0
  • Type

    conf

  • DOI
    10.1109/DRC.2013.6633838
  • Filename
    6633838
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1575371