Title :
High performance Bi2Se3 nanowire field-effect transistors
Author :
Hao Zhu ; Richter, Curt A. ; Erhai Zhao ; Bonevich, John E. ; Hyuk-Jae Jang ; Hui Yuan ; Haitao Li ; Arab, Ali ; Kirillov, Oleg ; Kimes, William A. ; Maslar, James E. ; Qiliang Li
Author_Institution :
Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
In this paper, we have fabricated Bi2Se3 nanowire FETs by using a self-alignment technique and observed excellent device characteristics. The FETs show unipolar, n-type behavior with a clear cutoff in the OFF-state with only thermally activated conduction at relatively high temperatures, and a well-saturated output current indicating surface metallic conduction. These data illustrate that charge transport in materials associated with topological insulator (TI) systems may be much more complicated than the conventional wisdom that has recently been developed for these novel systems.
Keywords :
bismuth compounds; field effect transistors; nanowires; surface conductivity; topological insulators; Bi2Se3; OFF-state; charge transport; device characteristics; high performance Bi2Se3 nanowire field-effect transistors; nanowire FET; self-alignment technique; surface metallic conduction; thermally activated conduction; three dimensional topological insulator; unipolar n-type behavior; well-saturated output current; Field effect transistors; Hafnium compounds; Logic gates; Materials; Temperature; Three-dimensional displays;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633843
