Defects and deformation on I–V characteristics of hetero bilayer (MoS2&WS2) MOSFET

fYear

2015

Firstpage

1

Lastpage

5

Abstract

In this paper we have made a brief discussion on the IV characteristics of hetero bilayer MOSFET and effect of defects and deformations on the IV characteristics of short channel hetero bilayer MOSFET. Also we have studied negative differential resistance (NDR) behaviour of MOSFET in relaxed configuration and after the application deformations like twist, wrap and defects like edge roughness and vacancy on 4nm hetero bilayer channel. Drain characteristics has been studied of this device with defects and deformations. Our results clearly indicate the variation in Peak to valley ratio (PVR) and Negative differential region (NDR) under minor defects and deformations.

Keywords

MOSFET; crystal defects; deformation; molybdenum compounds; negative resistance; tungsten compounds; vacancies (crystal); MoS₂-WS₂; current-voltage characteristics; edge roughness defect; hetero bilayer MOSFET; negative differential region; negative differential resistance; peak-to-valley ratio variation; size 4 nm; twist deformation; vacancy defect; wrap deformations; MOSFET; ANR (Armchair nano ribbon); DFTB (Density function tight binding); DIBL (drain induced barrier lowering); NDR (Negative differential resistance); NEGF (Non equilibrium green´s function); PVR (Peak to valley ratio); TMD (Transition metal dichalcogenide);

fLanguage

English

Publisher

ieee

Conference_Titel

Innovations in Information, Embedded and Communication Systems (ICIIECS), 2015 International Conference on

Conference_Location

Coimbatore

Print_ISBN

978-1-4799-6817-6

Type

conf

DOI

10.1109/ICIIECS.2015.7192978

Filename

7192978