3.4 μm diode lasers employing Al-free GaInAsSb/GaSb MQW active regions at 20 °C

Author

Nair, H.P. ; Salas, Rodolfo ; Sheehan, Nathaniel T. ; Maddox, Scott J. ; Bank, Seth R.

Author_Institution

Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA

fYear

2013

Firstpage

187

Lastpage

188

Abstract

Mid-infrared (3-5 μm) diode lasers are important for a wide range of applications, including gas sensing. GaSb-based type-I quantum well (QW) diode lasers are attractive choices for this wavelength range, due to their temperature stability and relatively lower operating voltage. In turn, these properties yield lower power consumption at threshold than quantum cascade lasers and interband cascade lasers, which is essential for portable systems. Excellent diode lasers, based on GaInAsSb QWs and lattice-matched AlGaAsSb barriers/waveguide layers, have been demonstrated below ~3 μm with high wallplug efficiency and low threshold currents.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; waveguide lasers; Al-free MQW active regions; AlGaAsSb; GaInAsSb-GaSb; lattice-matched barrier-waveguide layers; mid-infrared diode lasers; operating voltage; power consumption; temperature 20 degC; temperature stability; threshold currents; type-I quantum well diode lasers; wallplug efficiency; wavelength 3 mum to 5 mum; Diode lasers; Gas lasers; Quantum cascade lasers; Strain; Temperature; Temperature measurement; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2013 71st Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4799-0811-0

Type

conf

DOI

10.1109/DRC.2013.6633856

Filename

6633856