Title :
3.4 μm diode lasers employing Al-free GaInAsSb/GaSb MQW active regions at 20 °C
Author :
Nair, H.P. ; Salas, Rodolfo ; Sheehan, Nathaniel T. ; Maddox, Scott J. ; Bank, Seth R.
Author_Institution :
Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
Mid-infrared (3-5 μm) diode lasers are important for a wide range of applications, including gas sensing. GaSb-based type-I quantum well (QW) diode lasers are attractive choices for this wavelength range, due to their temperature stability and relatively lower operating voltage. In turn, these properties yield lower power consumption at threshold than quantum cascade lasers and interband cascade lasers, which is essential for portable systems. Excellent diode lasers, based on GaInAsSb QWs and lattice-matched AlGaAsSb barriers/waveguide layers, have been demonstrated below ~3 μm with high wallplug efficiency and low threshold currents.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; waveguide lasers; Al-free MQW active regions; AlGaAsSb; GaInAsSb-GaSb; lattice-matched barrier-waveguide layers; mid-infrared diode lasers; operating voltage; power consumption; temperature 20 degC; temperature stability; threshold currents; type-I quantum well diode lasers; wallplug efficiency; wavelength 3 mum to 5 mum; Diode lasers; Gas lasers; Quantum cascade lasers; Strain; Temperature; Temperature measurement; Threshold current;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633856
