Title :
Optically pumped (AlGaIn)(AsSb) semiconductor disk laser employing a dual-chip cavity
Author :
Rösener, B. ; Schulz, N. ; Rattunde, M. ; Moser, R. ; Manz, C. ; Köhler, K. ; Wagner, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys. (IAF), Freiburg
Abstract :
A GaSb-based optically pumped semiconductor disk laser with two separately pumped chips is presented. With this dual-chip configuration, an output power of 3.3 W at 2.25 mum wavelength was recorded for a heat sink temperature of 20degC.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical pumping; semiconductor lasers; (AlGaIn)(AsSb); dual-chip cavity; heat sink temperature; optically pumped semiconductor disk laser; output power; power 3.3 W; temperature 22 degC; wavelength 2.25 mum; Gas lasers; Laser excitation; Mirrors; Optical pumping; Optical recording; Optical resonators; Power generation; Power lasers; Pump lasers; Semiconductor lasers;
Conference_Titel :
IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the
Conference_Location :
Acapulco
Print_ISBN :
978-1-4244-1931-9
Electronic_ISBN :
978-1-4244-1932-6
DOI :
10.1109/LEOS.2008.4688890
