Advances in the development of the GaSb-based laser diodes operating within spectral range of 2 – 3.5 μm

Author

Belenky, G. ; Shterengas, L. ; Kipshidze, G. ; Hosoda, T. ; Suchalkin, S.

Author_Institution

State Univ. of New York at Stony Brook, Stony Brook, NY

fYear

2008

Firstpage

856

Lastpage

857

Abstract

This work discusses the latest achievements in design and performance of type I GaSb based lasers. It focuses on the performance of the room temperature operated lasers based on InGaAsSb/AlGaAsSb/GaSb and InGaAsSb/InAlGaAsSb/GaSb compressively strained heterostructures. The characteristics of the double-quantum-well GaSb-based diode lasers operating in 2.3-2.4 mum region with a room-temperature CW output power in excess of 1 W and a maximum power-conversion efficiency of 20 % are also presented and discussed.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; quantum well lasers; GaSb-based laser diodes; InGaAsSb-AlGaAsSb-GaSb; InGaAsSb-InAlGaAsSb-GaSb; compressively strained heterostructures; double-quantum-well lasers; power-conversion efficiency; room temperature operation; temperature 293 K to 298 K; wavelength 2 mum to 3.5 mum; Capacitive sensors; Diode lasers; Gas lasers; Laser modes; Optical design; Power generation; Power lasers; Quantum well lasers; Temperature measurement; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE Lasers and Electro-Optics Society, 2008. LEOS 2008. 21st Annual Meeting of the

Conference_Location

Acapulco

Print_ISBN

978-1-4244-1931-9

Electronic_ISBN

978-1-4244-1932-6

Type

conf

DOI

10.1109/LEOS.2008.4688891

Filename

4688891