Red-emitting InGaN/GaN quantum dot laser

Here demonstrated, for the first time, a red-emitting (λ=635 nm) laser in the nitride system using InGaN/GaN QDs. The red emitting QD laser heterostructure is grown on c-plane bulk GaN substrates having a defect density of ~1x10⁵ cm^-2 by plasma-assisted molecular beam epitaxy (PA-MBE). The GaN, AlGaN, and InGaN layers were grown at 740°C, 770°C and 590°C, respectively, while the QDs were grown at 530°C.