Title :
Controlling electronic properties of wafer-bonded interfaces among dissimilar materials: A path to developing novel wafer-bonded devices
Author :
Lal, Sunil ; Jing Lu ; Guidry, Megan ; Thibeault, Brian ; DenBaars, Steven P. ; Mishra, Umesh K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
Abstract :
A breakthrough in understanding the nature of wafer-bonded interfaces is reported. The DC-behavior of a wafer-bonded heterojunction between In0.53Ga0.47As (InGaAs) and In0.1Ga0.9N (InGaN) is investigated by using a wafer-bonded vertical electron transistor (BAVET) structure with an In0.52Al0.48As (InAlAs) gate-barrier-layer. It is demonstrated that the Fermi-level of the InAlAs layer influences the wafer-bonded-interface properties (WBIP) during the wafer-bonding of InGaAs to InGaN. Specifically, by using a high p-doping in the InAlAs layer, a dramatic improvement in the WBIP and consequently, a high-breakdown for a BAVET is demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; gallium compounds; indium compounds; semiconductor device breakdown; semiconductor doping; semiconductor heterojunctions; wafer bonding; wide band gap semiconductors; DC behavior; Fermi-level; In0.52Al0.48As; In0.53Ga0.47As-In0.1Ga0.9N; dissimilar materials; electronic properties; gate-barrier-layer; high p-doping; high-breakdown; wafer-bonded devices; wafer-bonded heterojunction; wafer-bonded interfaces; wafer-bonded vertical electron transistor structure; Apertures; Capacitance-voltage characteristics; Gallium nitride; Indium gallium arsenide; Logic gates; Voltage measurement;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633882
