Controlling electronic properties of wafer-bonded interfaces among dissimilar materials: A path to developing novel wafer-bonded devices

Author

Lal, Sunil ; Jing Lu ; Guidry, Megan ; Thibeault, Brian ; DenBaars, Steven P. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA

fYear

2013

Firstpage

1

Lastpage

2

Abstract

A breakthrough in understanding the nature of wafer-bonded interfaces is reported. The DC-behavior of a wafer-bonded heterojunction between In_0.53Ga_0.47As (InGaAs) and In_0.1Ga_0.9N (InGaN) is investigated by using a wafer-bonded vertical electron transistor (BAVET) structure with an In_0.52Al_0.48As (InAlAs) gate-barrier-layer. It is demonstrated that the Fermi-level of the InAlAs layer influences the wafer-bonded-interface properties (WBIP) during the wafer-bonding of InGaAs to InGaN. Specifically, by using a high p-doping in the InAlAs layer, a dramatic improvement in the WBIP and consequently, a high-breakdown for a BAVET is demonstrated.

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; gallium compounds; indium compounds; semiconductor device breakdown; semiconductor doping; semiconductor heterojunctions; wafer bonding; wide band gap semiconductors; DC behavior; Fermi-level; In_0.52Al_0.48As; In_0.53Ga_0.47As-In_0.1Ga_0.9N; dissimilar materials; electronic properties; gate-barrier-layer; high p-doping; high-breakdown; wafer-bonded devices; wafer-bonded heterojunction; wafer-bonded interfaces; wafer-bonded vertical electron transistor structure; Apertures; Capacitance-voltage characteristics; Gallium nitride; Indium gallium arsenide; Logic gates; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference (DRC), 2013 71st Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4799-0811-0

Type

conf

DOI

10.1109/DRC.2013.6633882

Filename

6633882