Complete band alignment determination of InAs-GaSb broken-gap tunneling field-effect transistor hetero-junction

The Tunneling Field-Effect Transistor (TFET) is currently considered to be a promising candidate for future low power electronic device applications because of its potential to achieve less than 60mV/decade subthreshold slope. Broken-gap hetero-junction TFETs are particularly attractive because they have been shown to have improved on-state performance compared to other TFET architectures due to the lower tunnel barrier heights.[1] Accurate band alignment determination is therefore critical to the design of proper band offsets at the hetero-junction interface. Here, we report the first complete band alignment determination for these structures by tailoring the layer thickness of the junction [2] and then using of graphene as transparent electrodes in an internal photo emission (IPE) me asurement to probe both electron and hole emission[3].