Title :
Functionalized 3D 7×20-array of vertically stacked SiNW FET for streptavidin sensing
Author :
Buitrago, Elizabeth ; Badia, Montserrat Fernandez-Bolanos ; Georgiev, Yordan M. ; Yu, Rong ; Lotty, Olan ; Holmes, Justin D. ; Nightingale, Adrian M. ; Ionescu, A.M.
Author_Institution :
Nanolab., EPFL, Lausanne, Switzerland
Abstract :
A 3D, vertically stacked silicon nanowire (SiNW) field effect transistor (FET) featuring a high density array (7×20) of fully depleted channels has been successfully fabricated by a CMOS compatible process on silicon on insulator (SOI) and functionalized for streptavidin detection for the first time. The channels are surrounded by conformal high-κ gate dielectrics (HfO2), and their conductivity can be uniquely tuned by three gates; a backgate (BG) and two symmetrical Pt side gates (SG) through a liquid, offering unique sensitivity tuning with high gate coupling (SS=75 mV/dec, α´=SS60mV/dec/SSmeasured=0.8, with highest sensitivity=93-99%, obtained for I=1 0pA-10nA, in weak inversion) ever published.
Keywords :
CMOS integrated circuits; biosensors; elemental semiconductors; field effect transistors; hafnium compounds; high-k dielectric thin films; nanowires; organic compounds; platinum; silicon; silicon-on-insulator; 3D vertically stacked silicon nanowire field effect transistor; CMOS compatible process; HfO2; Pt; SOI; Si; backgate; conductivity; current 10 pA to 10 nA; fully depleted channels; functionalized 3D 7x20-array; high density array; high gate coupling; high-κ gate dielectrics; sensitivity tuning; silicon on insulator; streptavidin detection; streptavidin sensing; symmetrical Pt side gates; vertically stacked SiNW FET; Arrays; Field effect transistors; Liquids; Logic gates; Sensitivity; Sensors; Three-dimensional displays;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633887
