Title :
Dynamic response of amorphous In-Ga-Zn-O thin-film transistors for 8K×4K flat-panel display
Author :
Rui Zhang ; Linsen Bie ; Yu, Elaine ; Kanicki, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
In this paper, for the first time, we report on the dynamic characteristics of the bottom-gate a-IGZO TFTs. Experiment results obtained for a-IGZO TFT are compared to conventional hydrogenated amorphous silicon (a-Si:H) TFTs.
Keywords :
amorphous semiconductors; dynamic response; gallium compounds; indium compounds; thin film transistors; zinc compounds; 8Kx4K flat-panel display; InGaZnO; amorphous In-Ga-Zn-O thin-film transistors; bottom-gate a-IGZO TFT; dynamic characteristics; dynamic response; Capacitance; Capacitors; Logic gates; Semiconductor device measurement; Testing; Thin film transistors; Voltage measurement;
Conference_Titel :
Device Research Conference (DRC), 2013 71st Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4799-0811-0
DOI :
10.1109/DRC.2013.6633891
