Title :
Buried heterostructure lasers for metropolitan area networks: anomalous low temperature behaviour
Author :
Ban, D. ; Sargent, E.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont.
fDate :
6/23/1905 12:00:00 AM
Abstract :
Buried heterostructure (BH) lasers are key sources for optical fibre communication systems and integrated optoelectronics. We have initiated a study of the low-temperature behaviour of these lasers with a view to gaining insight into the mechanisms which limit their performance as directly modulated sources for optical communications systems. In particular, we have focussed on the effect of quantum transport bottlenecking during ambipolar injection across quantum wells, a mechanism widely viewed as responsible for limiting these lasers to operating below their ultimate modulation bandwidth
Keywords :
metropolitan area networks; optical communication equipment; optical fibre networks; semiconductor lasers; temperature; transport processes; 1.55 micron; III-V semiconductor; InGaAsP-InP; ambipolar injection; anomalous low temperature behaviour; buried heterostructure lasers; directly modulated sources; integrated optoelectronics; metropolitan area networks; modulation bandwidth; optical fibre communication systems; quantum transport bottlenecking; quantum wells; Bandwidth; Epitaxial growth; Fiber lasers; Metropolitan area networks; Optical fiber communication; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Threshold voltage;
Conference_Titel :
Communications, Computers and signal Processing, 2001. PACRIM. 2001 IEEE Pacific Rim Conference on
Conference_Location :
Victoria, BC
Print_ISBN :
0-7803-7080-5
DOI :
10.1109/PACRIM.2001.953650
