A precipitation modeling of implantation induced defects

Author

Lee, Jae-hee ; Lee, Joon-sung ; Kim, Hyun-cheol ; Hwang, Jeong-mo ; Won, Tae-young

Author_Institution

TCAD Team, Hyundai Micro Electron., Chungju, South Korea

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

419

Lastpage

422

Abstract

This paper reports Monte Carlo calculation of the bimolecular reaction of extended defects which successfully predicts both the as-implanted impurity profiles (SIMS) and the diffusion profiles for a wide range of implant and annealing conditions. We developed a general kinetic model of extended defects, which explicitly takes the time evolution of size density of extended defects into account in an effort to cover a broad range of behaviors. Our Monte Carlo calculation is in quantitative agreement with the experimental deactivation data and successfully reproduces the rapid deactivation at the beginning phase followed by slow deactivation thereafter

Keywords

Monte Carlo methods; annealing; diffusion; dislocation loops; doping profiles; ion implantation; precipitation; semiconductor process modelling; Monte Carlo simulation; SIMS; annealing; bimolecular reaction; diffusion; dislocation loop; dopant deactivation; extended defect; impurity profile; ion implantation; kinetic model; precipitation; Amorphous materials; Annealing; Boron; Crystallization; Electrical engineering computing; Equations; Kinetic theory; Monte Carlo methods; Semiconductor process modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI and CAD, 1999. ICVC '99. 6th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5727-2

Type

conf

DOI

10.1109/ICVC.1999.820951

Filename

820951