TCAD simulation of the nitrogen effect by NO-nitrided oxide

Author

Lee, Kyong-Ha ; Lee, Jun-Seok ; Kim, Hyun-cheol ; Hwang, Jeong-Mo

Author_Institution

TCAD Team, Hyundai MicroElectron., Cheongju, South Korea

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

423

Lastpage

426

Abstract

Anomalous short channel characteristics in NO-nitrided gate oxide device were investigated in this paper. In NMOS, the NO-nitrided gate oxide device has less reverse short-channel effect with lower threshold voltage than pure gate oxide device. On the other hand, the opposite case is seen for PMOS. These characteristics are attributed to the boron dose loss in surface region by NO-nitrided oxidation in SIMS analysis. By these results, we can apply nitrogen effect by NO-nitrided oxide to the simulation using interface trap model in TSUPREM-4. We can optimize the NO anneal condition of 0.18 μm technology by simulation

Keywords

MOSFET; annealing; nitridation; semiconductor process modelling; technology CAD (electronics); 0.18 micron; NMOS device; NO nitridation; PMOS device; SIMS; TCAD simulation; TSUPREM-4; annealing; gate oxide; interface trap model; nitrogen effect; reverse short channel effect; threshold voltage; Annealing; Atomic measurements; Boron; Dielectric measurements; Etching; MOS devices; Nitrogen; Oxidation; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI and CAD, 1999. ICVC '99. 6th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5727-2

Type

conf

DOI

10.1109/ICVC.1999.820952

Filename

820952