DocumentCode
1577077
Title
A single transistor ferroelectric RAM with nondestructive readout operations
Author
Kim, Shi-Ho ; Yang, Ll-Suk ; Lee, Won Jae ; In-Kyu You ; Yu, Byoung Gon ; Cho, Kyoung-lk
Author_Institution
Dept. of Semicond. Sci., Wonkwang Univ., Jeonbuk, South Korea
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
433
Lastpage
436
Abstract
A nonvolatile single transistor type FRAM is proposed. To overcome the selection problem of one-transistor-type FRAM, each well is isolated from adjacent columns, hence, the well bias can be controlled individually and can be floating state. The results of HSPICE simulations showed the successful operations of the proposed cell array. The worst gate disturb voltage of unselected cell is less than 2 V, which satisfies V/3 rule
Keywords
SPICE; cellular arrays; circuit simulation; ferroelectric storage; random-access storage; HSPICE simulations; cell array; floating state bias; gate disturb voltage; nondestructive readout operations; single transistor ferroelectric RAM; unselected cell; well bias; Capacitors; Circuit simulation; Ferroelectric films; Ferroelectric materials; MOSFET circuits; Nonvolatile memory; Random access memory; SPICE; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-5727-2
Type
conf
DOI
10.1109/ICVC.1999.820955
Filename
820955
Link To Document