Title :
A single transistor ferroelectric RAM with nondestructive readout operations
Author :
Kim, Shi-Ho ; Yang, Ll-Suk ; Lee, Won Jae ; In-Kyu You ; Yu, Byoung Gon ; Cho, Kyoung-lk
Author_Institution :
Dept. of Semicond. Sci., Wonkwang Univ., Jeonbuk, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
A nonvolatile single transistor type FRAM is proposed. To overcome the selection problem of one-transistor-type FRAM, each well is isolated from adjacent columns, hence, the well bias can be controlled individually and can be floating state. The results of HSPICE simulations showed the successful operations of the proposed cell array. The worst gate disturb voltage of unselected cell is less than 2 V, which satisfies V/3 rule
Keywords :
SPICE; cellular arrays; circuit simulation; ferroelectric storage; random-access storage; HSPICE simulations; cell array; floating state bias; gate disturb voltage; nondestructive readout operations; single transistor ferroelectric RAM; unselected cell; well bias; Capacitors; Circuit simulation; Ferroelectric films; Ferroelectric materials; MOSFET circuits; Nonvolatile memory; Random access memory; SPICE; Switches; Voltage;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820955
