DocumentCode
1577135
Title
Improved etching technique of E-ICP (Enhanced Inductively Coupled Plasma)
Author
Jeong, Jae Seong ; O, Beom-Hoan ; Park, Se-Geun
Author_Institution
Sch. of Electr. & Comput. Eng., Inha Univ., Inchon, South Korea
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
441
Lastpage
443
Abstract
A novel technique, named as “Enhanced-ICP”, for a better etch process, has been proposed. Here, we report an improved result of the E-ICP. A photo-resist etch uniformity of below 1% within 10 cm in diameter has been accomplished with improved plasma density and the low electron temperature of 1 eV
Keywords
photolithography; plasma density; semiconductor technology; sputter etching; Si; enhanced inductively coupled plasma; etching technique; photoresist etch uniformity; plasma density; Coils; Electrons; Etching; Magnetic fields; Plasma applications; Plasma density; Plasma sources; Plasma temperature; Plasma waves; Power generation economics;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-5727-2
Type
conf
DOI
10.1109/ICVC.1999.820958
Filename
820958
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