Title :
Dishing and erosion in STI CMP
Author :
Byoung-Ho Kwon ; Jong-Hyup Lee ; Hee-Jeen Kim ; Seoung Soo Kweon ; Young-Gyoon Ryu ; Jeong-Gun Lee
Author_Institution :
Syst. IC R&D Center, Hyundai Electron. Ind. Co. Ltd., Kyoungki, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
The effect of pattern density, trench width and selectivity of slurry on dishing and erosion in STI CMP process was investigated by using specially designed isolation pattern. As trench width gets wider and active pattern density gets higher, dishing becomes more severe. Low selectivity slurry shows less dishing at over 20 μm trench width, whereas high selectivity slurry shows less dishing at below 20 μm trench. Erosion of low active pattern density area is more severe and it is not affected by trench width. Generally, high selectivity slurry induces less erosion
Keywords :
chemical mechanical polishing; isolation technology; STI CMP; dishing; erosion; isolation technology; pattern density; slurry selectivity; trench width; Chemicals; Dielectric materials; Dielectric measurements; Electronics industry; Filling; Isolation technology; Monitoring; Research and development; Slurries; Thickness control;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820963
