DocumentCode
1577274
Title
Dishing and erosion in STI CMP
Author
Byoung-Ho Kwon ; Jong-Hyup Lee ; Hee-Jeen Kim ; Seoung Soo Kweon ; Young-Gyoon Ryu ; Jeong-Gun Lee
Author_Institution
Syst. IC R&D Center, Hyundai Electron. Ind. Co. Ltd., Kyoungki, South Korea
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
456
Lastpage
458
Abstract
The effect of pattern density, trench width and selectivity of slurry on dishing and erosion in STI CMP process was investigated by using specially designed isolation pattern. As trench width gets wider and active pattern density gets higher, dishing becomes more severe. Low selectivity slurry shows less dishing at over 20 μm trench width, whereas high selectivity slurry shows less dishing at below 20 μm trench. Erosion of low active pattern density area is more severe and it is not affected by trench width. Generally, high selectivity slurry induces less erosion
Keywords
chemical mechanical polishing; isolation technology; STI CMP; dishing; erosion; isolation technology; pattern density; slurry selectivity; trench width; Chemicals; Dielectric materials; Dielectric measurements; Electronics industry; Filling; Isolation technology; Monitoring; Research and development; Slurries; Thickness control;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-5727-2
Type
conf
DOI
10.1109/ICVC.1999.820963
Filename
820963
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