Title :
Improvement of hot carrier lifetime by cleaning process prior to selective reoxidation in metal gate LDD nMOSFETs
Author :
Kim, Jae-Hyung ; Choy, Jun-Ho ; Lee, Duk-Hee ; Cheong, Shin-Young ; Kim, Young-Hoon ; Son, Jeong-Hwan ; Lee, Young-Jong ; Lee, Kyung-Ho
Author_Institution :
Div. of R&D, Hyundai Microlectron. Co., Cheongju, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
We have investigated the effects of the cleaning process prior to selective reoxidation on the device reliability against hot carrier degradation. A remarkable increase in the lifetimes was obtained for the devices in which the remaining oxide under the LDD spacer was partially removed. This additional cleaning process was found to effectively improve the interface quality of the spacer bottom oxide
Keywords :
MOSFET; carrier lifetime; hot carriers; oxidation; surface treatment; Si; cleaning; device reliability; hot carrier lifetime; interface quality; metal gate LDD nMOSFET; selective reoxidation; Cleaning; Degradation; Etching; Hot carriers; Impurities; Interface states; MOSFET circuits; Research and development; Stress; Tungsten;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820978
