DocumentCode
1577700
Title
Improvement of hot carrier lifetime by cleaning process prior to selective reoxidation in metal gate LDD nMOSFETs
Author
Kim, Jae-Hyung ; Choy, Jun-Ho ; Lee, Duk-Hee ; Cheong, Shin-Young ; Kim, Young-Hoon ; Son, Jeong-Hwan ; Lee, Young-Jong ; Lee, Kyung-Ho
Author_Institution
Div. of R&D, Hyundai Microlectron. Co., Cheongju, South Korea
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
487
Lastpage
489
Abstract
We have investigated the effects of the cleaning process prior to selective reoxidation on the device reliability against hot carrier degradation. A remarkable increase in the lifetimes was obtained for the devices in which the remaining oxide under the LDD spacer was partially removed. This additional cleaning process was found to effectively improve the interface quality of the spacer bottom oxide
Keywords
MOSFET; carrier lifetime; hot carriers; oxidation; surface treatment; Si; cleaning; device reliability; hot carrier lifetime; interface quality; metal gate LDD nMOSFET; selective reoxidation; Cleaning; Degradation; Etching; Hot carriers; Impurities; Interface states; MOSFET circuits; Research and development; Stress; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-5727-2
Type
conf
DOI
10.1109/ICVC.1999.820978
Filename
820978
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