Title :
Effect of CMP process on alignment accuracy
Author :
Hong Jong Kyun ; Yang Hyun Jo ; Park Jin Won
Author_Institution :
Div. of R&D, Hyundai Microelectron. Co. Ltd., Cheongju
fDate :
6/21/1905 12:00:00 AM
Abstract :
In this paper, experimental results on alignment accuracy in STI (Shallow Trench Isolation) CMP (Chemical Mechanical Polishing) process is presented. The effect of alignment mark tone with sampling number on alignment accuracy is described for various CMP conditions. Our preliminary results show that alignment accuracy of concave alignment mark is better than convex alignment mark and CMP polishing uniformity affects the alignment accuracy in the case of over polishing
Keywords :
DRAM chips; chemical mechanical polishing; elemental semiconductors; silicon; DRAM; Si; alignment accuracy; alignment mark tone; chemical mechanical polishing; concave alignment mark; polishing uniformity; shallow trench isolation; Chemical processes; Chemical technology; Isolation technology; Microelectronics; Optical design; Optical films; Random access memory; Sampling methods; Silicon; Slurries;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820981
