DocumentCode
1577772
Title
Effect of CMP process on alignment accuracy
Author
Hong Jong Kyun ; Yang Hyun Jo ; Park Jin Won
Author_Institution
Div. of R&D, Hyundai Microelectron. Co. Ltd., Cheongju
fYear
1999
fDate
6/21/1905 12:00:00 AM
Firstpage
494
Lastpage
496
Abstract
In this paper, experimental results on alignment accuracy in STI (Shallow Trench Isolation) CMP (Chemical Mechanical Polishing) process is presented. The effect of alignment mark tone with sampling number on alignment accuracy is described for various CMP conditions. Our preliminary results show that alignment accuracy of concave alignment mark is better than convex alignment mark and CMP polishing uniformity affects the alignment accuracy in the case of over polishing
Keywords
DRAM chips; chemical mechanical polishing; elemental semiconductors; silicon; DRAM; Si; alignment accuracy; alignment mark tone; chemical mechanical polishing; concave alignment mark; polishing uniformity; shallow trench isolation; Chemical processes; Chemical technology; Isolation technology; Microelectronics; Optical design; Optical films; Random access memory; Sampling methods; Silicon; Slurries;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location
Seoul
Print_ISBN
0-7803-5727-2
Type
conf
DOI
10.1109/ICVC.1999.820981
Filename
820981
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