Title :
Growth of RuOx thin films by metalorganic chemical vapor deposition
Author :
Kim, Younsoo ; Jeong, Kyung-Cheol ; Joo, Jae-Hyun ; Park, Jong-Bum ; Lee, Jun-Sik ; Yoon, Jong-Woo ; Roh, Jae-Sung
Author_Institution :
Res. Cente, Hyundai Microelectron., Cheongju, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
RuOx thin films were deposited on TiN/SiO2/Si substrates by metal organic chemical vapor deposition (MOCVD) at deposition temperatures of 250°C-400° C. We have used Ru(mhd), as a metal organic (MO) source. No films were deposited without the addition of O2 gas. RuO2 films were deposited at high O2 addition. For the deposition of Ru films in the surface reaction controlled region, the activation energy was 0.58 eV. The smooth and well-adherent Ru films had very low resistivities. The microstructure of Ru films was greatly dependent on deposition conditions. Ru films deposited at 27°C showed a good step coverage
Keywords :
MOCVD; crystal microstructure; electrical resistivity; ruthenium compounds; surface topography; thin films; 250 to 400 degC; MOCVD; RuO; TiN-SiO2-Si; TiN/SiO2/Si substrates; activation energy; microstructure; resistivity; step coverage; surface reaction controlled region; thin films; Chemical vapor deposition; Conductivity; MOCVD; Organic chemicals; Rough surfaces; Semiconductor films; Sputtering; Substrates; Surface roughness; Temperature;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820985
