Improved planarization method using sandwiched hard layer (SHaL) CMP

Author

Kim, J.Y. ; Yoon, B.U. ; Hah, S.R. ; Moon, J.T. ; Lee, S.I.

Author_Institution

Semicond. R&D Center, Samsung Electron., Kyungki, South Korea

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

504

Lastpage

505

Abstract

CMP uniformity and planarity directly affect the Post-CMP TTV (Total Thickness Variation). Decreased TTV is necessary for successful patterning of devices. The trend in scaling down of device feature size requires smaller TTV and hence tighter CMP performances. The three layer pad stack with IC-1000/hard layer/foam layer (SHaL) was designed to improve the planarity with minimal deterioration of CMP uniformity. SHaL CMP process improves the planarity with negligible effect on uniformity. Reduced CMP time and less ILD oxide is achievable with the SHaL CMP process. Therefore preliminary tests show that improvements in post-CMP TTV can be achieved with reduced CoO. Further enhancements in the efficiency of the process is under investigation

Keywords

chemical mechanical polishing; chemical mechanical polishing; feature size scaling down; planarization; process efficiency; sandwiched hard layer CMP; three layer pad stack; total thickness variation; uniformity; Costs; Degradation; Lithography; Planarization; Research and development; Silicon compounds; Size control; Surfaces; TV; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI and CAD, 1999. ICVC '99. 6th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-5727-2

Type

conf

DOI

10.1109/ICVC.1999.820986

Filename

820986