Title :
Scalable threshold voltage model for deep-submicrometer MOSFET
Author :
Kahng, J.R. ; Kim, J.H. ; Jo, M.S. ; Yoon, H.S.
Author_Institution :
Dept. of Devoce Phys., Hyundai Electron. Ind. Co., Kyungki, South Korea
fDate :
6/21/1905 12:00:00 AM
Abstract :
Considering effects of nonuniform doping profile in vertical and lateral directions of MOSFET and solving a quasi two-dimensional differential equation for the surface potential, we have proposed a new threshold voltage model. Our model predicts well an initial roll-up of the threshold voltage with decreasing channel lengths and reduction of it due to the reverse short-channel effects and the short-channel effects
Keywords :
MOS integrated circuits; MOSFET; VLSI; doping profiles; integrated circuit modelling; semiconductor device models; surface potential; VLSI; decreasing channel lengths; deep-submicrometer MOSFET; initial roll-up; lateral directions; nonuniform doping profile; quasi two-dimensional differential equation; reverse short-channel effects; scalable threshold voltage model; surface potential; vertical directions; Differential equations; Doping profiles; Electronics industry; MOSFET circuits; Physics; Quasi-doping; Research and development; Semiconductor process modeling; Surface fitting; Threshold voltage;
Conference_Titel :
VLSI and CAD, 1999. ICVC '99. 6th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-5727-2
DOI :
10.1109/ICVC.1999.820990
