DocumentCode :
1578198
Title :
Photoluminescence of ZnO thin films on Si substrate
Author :
Bartkiewicz, K. ; Lukasiak, Z. ; Zawadzka, A. ; Plóciennik, P. ; Korcala, A.
Author_Institution :
Fac. of Phys., Astron., & Inf., Nicolaus Copernicus Univ., Torun, Poland
fYear :
2010
Firstpage :
1
Lastpage :
4
Abstract :
In this paper photoluminescence (PL) properties of ZnO (zinc oxide) thin films on Si substrates are presented. Samples were prepared by sol-gel method. Photoluminescence experiments where carried out at different temperatures (10 K- 300 K). Registered spectra exhibit multiband structure witch depends on the temperature and preparation conditions.
Keywords :
II-VI semiconductors; photoluminescence; sol-gel processing; zinc compounds; ZnO; multiband structure; photoluminescence; sol-gel method; temperature 10 K to 300 K; Chemical lasers; Laser excitation; Laser tuning; Nitrogen; Optical pulses; Photoluminescence; Semiconductor thin films; Substrates; Temperature dependence; Zinc oxide; emission; photoluminescence; sol-gel; temperature dependence; thin film; zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transparent Optical Networks (ICTON), 2010 12th International Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-7799-9
Electronic_ISBN :
978-1-4244-7797-5
Type :
conf
DOI :
10.1109/ICTON.2010.5548975
Filename :
5548975
Link To Document :
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