Title :
Implant enhanced dual intracavity polarization switching asymmetric current injected VCSEL
Author :
Zheng, Yan ; Lin, Chin-Han ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
Output polarization is controlled by injecting current along crystalline directions. VCSELs with record-low threshold current of 0.19 mA and extinction ratio >;21dB from fit is achieved. Polarization switching is shown to be enhanced by implantation.
Keywords :
polarisation; surface emitting lasers; switching; asymmetric current injected VCSEL; current 0.19 mA; implant enhanced dual intracavity; polarization switching; vertical cavity surface emitting laser; Gallium arsenide; Implants; Optical switches; Power generation; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2011 and the National Fiber Optic Engineers Conference
Conference_Location :
Los Angeles, CA
Print_ISBN :
978-1-4577-0213-6
