Title :
In-line electrical characterization of ultrathin gate dielectric films
Author :
Cubaynes, Florence ; Passefort, Sophie ; Eason, Kwame ; Zhang, Xiafang ; Date, Lucien ; Pique, Didier ; Conard, Thierry ; Rothschild, Aude ; Schaekers, Marc
Author_Institution :
Philips Res., Leuven, Belgium
fDate :
6/24/1905 12:00:00 AM
Abstract :
In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and "classic" capacitance-voltage measurements shows the suitability of in-line measurement techniques for a first qualitative evaluation of ultrathin dielectric films.
Keywords :
dielectric measurement; dielectric thin films; nitridation; plasma materials processing; silicon compounds; 1.5 nm; SiO2; capacitance-voltage measurement; electrical measurement; equivalent oxide thickness; in-line measurement; noncontact measurement; optical measurement; plasma nitrided oxide; ultrathin gate dielectric film; Capacitance; Capacitance-voltage characteristics; Dielectric films; Dielectric measurements; Optical films; Oxidation; Performance evaluation; Plasma measurements; Silicon; Vibration measurement;
Conference_Titel :
Advanced Semiconductor Manufacturing 2002 IEEE/SEMI Conference and Workshop
Print_ISBN :
0-7803-7158-5
DOI :
10.1109/ASMC.2002.1001563
