Alternative Smart-cut-like process for ultra-thin SOI fabrication

We describe for the first time a layer transfer caused by delamination along the hydrogen platelet layer formed by RF plasma hydrogenation at a place of end-of-range defects. The process involves first creating a buried trap layer using variously silicon, or argon implantation. Wafers thus processed with an initial implant to levels below 10¹⁶ cm^-2 are then hydrogenated with RF plasma. Next steps include pre-bonding, cleavage, and post-bonding as in the Smart-cut process. The cleavage occurs at a depth corresponding to the maximum of vacancy-enriched defects (between R_p/2 and R_p). Plasma hydrogenation may be used as a step in the process of fabricating thin SOI wafers.